• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    For electrical and pneumatic testing of pressure sensor chips (1), the pressure sensor chip (1) is electrically contacted and set under defined overpressure by means of a pressure chamber (7), wherein the pressure prevailing in the pressure chamber (7) is detected by a reference pressure sensor. The method according to the invention makes it possible to test pressure sensor chips (1) of a semiconductor wafer under defined conditions, wherein the testing is possible not only at a defined pressure but also at pressure fluctuations lying in the acoustic range.
    公开号:AT511058A4
    申请号:T3722011
    申请日:2011-03-17
    公开日:2012-09-15
    发明作者:Rainer Dr Gaggl
    申请人:Rainer Dr Gaggl；
    IPC主号:
    专利说明:

    * «« * · · «· ·« · · · · · · · · · · · · · · · · · · · · · · · 4 * «f * 1
    The invention relates to a method and a device for the electrical and pneumatic testing of pressure sensors.
    The production of pressure sensors is often done by microstructuring of semiconductor wafers. Advanced manufacturing techniques often integrate the production of pressure-sensitive areas - usually membrane structures - with an electronic evaluation circuit. Sensors manufactured in this way are also referred to as MEMS (Micro Electro Mechanical Systems). This kind of
    Production technology allows a large number of (identical) pressure sensors to be produced simultaneously on a semiconductor wafer. Electrical pressure sensors can also be manufactured in thin-film technology.
    The testing of the MEMS pressure sensors is done so far ('' disc inspection ') in that the still on the wafer sensors ("chips") using a so-called probe card ("sample card") are only electrically tested without the for to stimulate the pressure measurement used membrane structures by pressurizing. The pressure testing and calibration of the pressure sensors takes place only after the separation of the chips and their installation in a housing. This has the disadvantage that sensors with defective membranes are recognized only after installation in the housing and so in case of failure of the pressure sensor chip must be discarded together with the housing.
    An improved test method combines electrical testing of the pressure sensor with mechanical testing of the membrane structures by electrically contacting the pressure sensor and simultaneously pressurizing.
    In the prior art, several methods are known to combine the pressurization with the electrical testing. One method uses the combination of an electric
    * * i * * * * * * * ψ «kt * * * *« * * »« «· · · · ·« 4 · »2
    Contact used probe card with a zoom brought close to the sensor membranes nozzle. A disadvantage here is that the pressure of the air flow emerging from the nozzle at the location of the sensor membranes is not well known and the pressure over the cross section of the air flow is not constant. This means limitations regarding the use of the method for accurately calibrating the pressure sensors during the disc inspection.
    In another known method, the complete measuring setup with probe card and semiconductor wafer as well as the mechanics required for positioning the semiconductor wafer are installed in a pressure chamber. Although accurate pressure calibration is possible, a disadvantage is the relatively long time required to test multiple wafers. For this purpose, the pressure chamber must be vented and opened each time.
    The invention is based on the object to propose a simplified method and a simplified device of the type mentioned.
    This object is achieved with a method having the feature of claim 1 or with a device having the features of the independent claim directed to the device.
    Preferred and advantageous embodiments of the invention (method / device) are the subject of the dependent subclaims.
    The present invention uses a pressure chamber component, which is assigned to the surface of the semiconductor wafer, for example, placed on, and which is connected to a compressed gas supply, with which the chip to be measured are put under pressure. The pressure chamber component is open to the chip surface. After approaching • fr fr > Fr * fr * fr * fr * fr * fr * fr * fr * fr * fr * fr * fr * fr * fr * fr * fr * fr * fr * fr * fr * fr fr Placing) of the pressure chamber component on the semiconductor wafer, the surface of the semiconductor wafer forms a wall of the pressure chamber, so that the interior thereof is closed. As a result, an overpressure can build up over the compressed gas supply via the chip.
    The device can be combined with the arrangement of the test contacts (the so-called test or probe card). By placing the arrangement on the surface of the semiconductor wafer, the chip front side is contacted simultaneously electrically and the pressure chamber is closed.
    In a preferred embodiment of the present invention, the pressure chamber is designed such that it comprises at least one fixed part connected to the probe card and at least one part movable in the vertical direction (perpendicular to the probe card or the semiconductor wafer) - hereinafter referred to as "ring seal". which can follow the relative movements between the semiconductor wafer and the pressure chamber upon contact. This ring seal can follow changes in the contact delivery and also compensate for contact wear of the test probes.
    An embodiment of this ring seal can be easily pressed for example by at least one spring with little force on the semiconductor wafer and thus produce the tightness of the pressure chamber. By correspondingly weak design of the spring here the risk of damage to the semiconductor wafer can be reduced by particles.
    An advantageous embodiment consists in the sealing of the pressure chamber by a means of air bearings on the surface of the wafer (wafer) held floating ring seal. Air bearings have the property of expanding very narrow bearing forces as the air gap narrows, thereby counteracting a narrowing of the bearing gap. Thus, contact of the ring seal with the wafer surface and the risk of damage with particles can be avoided with great reliability.
    Calibrating pressure sensor chips in the course of disk measurement requires precise knowledge of the pressure applied across the sensor diaphragms. For this purpose, in addition to the gas supply, a further line may be connected to the pressure chamber component, which leads to a pressure sensor (with high accuracy) serving as calibration reference ("reference pressure sensor"). Such a reference pressure sensor can also be integrated in miniaturized form in the pressure chamber itself.
    One embodiment of pressure sensors made in MEMS technology is used to measure fast acoustic pressure fluctuations. Such sensors are used, for example, as a microphone in miniaturized applications, such as mobile phones.
    The method according to the invention and the device according to the invention can also be used for testing such microphones. Here, the pressurized gas supply is connected to a source for generating rapid pressure fluctuations, so for example by a speaker. The source for generating fast pressure fluctuations (loudspeakers) can also be integrated in the pressure chamber itself.
    An advantage (at least) of a pressure chamber integrated into a probe card is its very small dimension compared to acoustic wavelengths. A sound field generated in the pressure chamber will therefore be largely free of standing waves and resonances. The exact knowledge of the amplitude of the pressure fluctuations for calibrating the microphone to be tested can be obtained, for example, by a method incorporated in the pressure chamber or in analogy to the static pressure test Φ * · ♦ · · φ Φ Φ · Φ 4 Φ · ΦΦ # · ·
    Φ I 1 * I · 4 11 «I I« I * «·« * · »· ΦΦΦΦ Φ #« * «5 reference microphone used connected reference microphone done.
    With the procedure / device according to the invention, pressure sensors which emit electrical signals which send the pressure to the sensor proportionally can also be tested, as can pressure sensors which emit an electrical signal from a switching threshold.
    Further details, features and advantages of the invention will become apparent from the following description of preferred embodiments, in which reference is made to the schematic drawings. It shows:
    Fig. 1 shows a first embodiment of a device according to the invention and
    Fig. 2 shows a second embodiment of a device according to the invention for the electrical and pneumatic testing of pressure sensors.
    In the embodiment shown in Fig. 1, a semiconductor wafer 5 is provided, in which several
    Pressure sensor chips 1 are provided with pressure-sensitive membranes, which are not yet removed from the semiconductor wafer 5 {broken out). The pressure sensor chip 1 is associated with a contact surface 2, which is associated with a test needle 3 for electrical contacting on the chip front side in the illustrated embodiment.
    In Fig. 1 it is shown that on the semiconductor wafer 5 with the pressure sensor chips 1, a pressure chamber 7 (pressure chamber component) is placed in such a way that the semiconductor wafer 5 seals the interior 9 of the pressure chamber 7 open to one side. Thus, in the interior 9 of the pressure chamber 7 via the gas supply 8, a defined pressure can be established.
    In the embodiment shown in FIG. 1, the pressure chamber 7 is associated with a reference pressure sensor, which in the exemplary embodiment shown in FIG. 1 is connected via a connection 4 to the interior of the pressure chamber 9. Thus, the pressure prevailing in the interior 9 of the pressure chamber 7 overpressure can be detected.
    As already mentioned above, within the scope of the invention, the reference pressure sensor can also be arranged in the interior 9 of the pressure chamber 7, so that the separate terminating line 4 for the reference pressure sensor can be dispensed with.
    In the embodiment shown in Fig. 2, a modified embodiment of the pressure chamber 7 is provided.
    In the embodiment shown in Fig. 2, the pressure chamber 7 consists of two parts connected to the needle card 12 parts 11 and 11 ', wherein the parts 11, 11' are arranged on opposite sides of the probe card 12.
    In the part 11 of the pressure chamber 7, which is arranged on the side facing away from the semiconductor wafer 5 to be tested needle card 12, a gas supply 8 for the pressure chamber 7, which opens into the interior 9 of the pressure chamber 7, is provided. The on the semiconductor wafer 5 facing side of the probe card 12 disposed part 11 'of the pressure chamber 7 is attached to the probe card 12 via a ring 15 made of electrically insulating material. Through this ring 15 of electrically insulating material are the test needles 3, 3 'for electrically contacting the pressure sensor chip 1, which is still integrated in the embodiment shown in the semiconductor wafer 5, that is not broken out of this out.
    The pressure chamber 7 in the embodiment shown in FIG. 2 further has (at least) an annular part 13 which, relative to the part 11 'connected to the probe card 12, has the part 11' '. · * * · · · * ···· »« »« * · Μ «« · · · · · 7
    Pressure chamber 7 in the direction of the double arrow 16, that is substantially perpendicular to the plane of the probe card 12 and the semiconductor wafer 5 is adjustable.
    Between the part 11 'of the pressure chamber 7, which is arranged on the semiconductor wafer 5 facing side of the probe card 12 and the movable part 13 of the pressure chamber 7, a spring, not shown, may be provided, which formed as a ring seal part 13 of the pressure chamber 7 in the direction loaded on the semiconductor wafer 5 out.
    In the embodiment shown in Fig. 2, the movable part 13 is held by an air bearing in the gap 14 between the part 13 and the semiconductor writing 5 at a small distance from the semiconductor wafer 5. The air bearing in the gap 14 is formed by the fact that compressed air exits through the gap 14 between the movable part 13 and the top of the semiconductor wafer 5. By the air bearing in the gap 14 it is achieved that the annular member 13 is sealingly but spaced from the top of the semiconductor wafer 5 is maintained.
    The air bearing in the gap 14 is acted upon via an annular channel 19 (radially inwardly open groove in the part 13) and axially parallel channels 18 with compressed air. The channels 18 open into depressions in the semiconductor wafer 5 facing, annular end face of the movable part 13. The depressions are arranged, for example, uniformly distributed over the end face of the part 13. The compressed air can be removed from the interior 9 of the pressure chamber 7 or fed to the channel 19 via separate lines (not shown).
    Also in the embodiment of the device according to the invention shown in FIG. 2, the interior chamber 9 of the pressure chamber 7 is assigned a reference pressure sensor which exceeds * *. * * * T. *. * .B ». * ···· * * * I * I * A conduit 4 is connected to the interior 9 of the pressure chamber 7.
    In the embodiment of FIG. 1 and in FIG. 2, the reference pressure sensor can also be assigned to the gas feed 8 or arranged in the interior 9 of the pressure chamber 7. It is essential that the reference pressure sensor detects the pressure in the interior 9 of the pressure chamber 7.
    In the context of the invention, an embodiment of the device is considered, in which more than one pressure chamber 7 with movable part 13 (ring seal) are arranged on a probe card 12.
    With the method according to the invention and the device according to the invention, it is possible to subject a single pressure sensor chip 1 or at the same time two or more pressure sensor chips 1 to an electrical or pneumatic test.
    In summary, an embodiment of the invention can be described as follows.
    For the electrical and pneumatic testing of pressure sensor chips 1, the pressure sensor chip 1 is contacted electrically and set with the aid of a pressure chamber 7 under defined overpressure, wherein the pressure prevailing in the pressure chamber 7 pressure is detected by a reference pressure sensor. The method according to the invention makes it possible to test pressure sensor chips 1 of a semiconductor wafer 5 under defined conditions, wherein the testing is possible not only with a defined pressure but also with pressure fluctuations lying in the acoustic range.
    权利要求:
    Claims (20)
    [1]
    * · * ·

    1. A method for the electrical and pneumatic testing of one, two or more pressure sensors, in particular pressure sensor chips, characterized in that the Pressure sensor is electrically contacted, that the pressure sensor is set under a defined overpressure and that the pressure sensor is loaded by a reference pressure sensor overloading the pressure sensor.
    [2]
    2. The method according to claim 1, characterized in that the overpressure is built on one by a pressure sensor to be tested out open pressure chamber with its open side towards the pressure sensor, in particular a pressure sensor contained in a semiconductor wafer is applied.
    [3]
    3. The method according to claim 1 or 2, characterized in that the pressure is gradually increased.
    [4]
    4. The method according to any one of claims 1 or 2, characterized in that the pressurization is constructed analogously to lying in the acoustic range pressure fluctuations.
    [5]
    5. The method according to any one of claims 1 to 4, characterized in that a produced in MEMS technology pressure sensor is tested.
    [6]
    6. The method according to claim 5, characterized in that a microphone is checked.
    [7]
    7. A device for carrying out a method according to one of claims 1 to 6, characterized by a unilaterally open pressure chamber (7) through one of the pressure chamber (7) associated with line (8) for supplying * «• Μ ·« * * · «· «· · · · · · · · · ·« * * «« 4 t «· * * ··· * * 10 compressed gas and through a reference pressure sensor assigned to the pressure chamber (7).
    [8]
    8. The device according to claim 7, characterized in that the reference pressure sensor via a connection (4) with the interior (9) of the pressure chamber (7) is in communication.
    [9]
    9. Apparatus according to claim 7, characterized in that the reference pressure sensor in the interior (9) of the pressure chamber (7) is provided.
    [10]
    10. Device according to one of claims 7 to 9, characterized in that as a reference pressure sensor, a reference microphone is provided.
    [11]
    11. The device according to one of claims 7 to 9, characterized in that the pressure chamber (7) on a probe card (12) with test needles (3) is arranged, and that the pressure chamber (7) has a part (13) which relatively to the probe card (12) is movable.
    [12]
    12. The device according to claim 11, characterized in that the movable part (13) is designed as a ring seal.
    [13]
    13. The apparatus of claim 11 or 12, characterized in that the part (13) of the pressure chamber (7) is substantially perpendicular to the plane of the probe card (12) or to be tested semiconductor device (5) movable.
    [14]
    14. The device according to one of claims 11 to 13, characterized in that the needle card (12) connected to the part of the pressure chamber (7) has two parts (11 and 11 ') arranged on opposite sides of the probe card (12) are. • * • * • * 11
    [15]
    15. The device according to one of claims 11 to 14, characterized in that the at the the pressure sensor chip to be tested (1) facing side of the probe card (12) arranged part (11 ') of the pressure chamber (7) on the probe card (12) via a ring (15) of electrically insulating material is arranged, and that the test needles (3) of the probe card (12) through the ring (15) are guided.
    [16]
    16. Device according to one of claims 11 to 15, characterized in that between the needle card (12) connected to the part dl ') of the pressure chamber (7) and the movable part (13) of the pressure chamber (7) is provided at least one spring ,
    [17]
    17. Device according to one of claims 11 to 16, characterized in that between the semiconductor wafer (5) facing the end face of the movable part (13) of the pressure chamber (7) and the semiconductor wafer (5), an air bearing (14) is formed.
    [18]
    18. Device according to one of claims 11 to 17, characterized in that the pressure chamber (7) is associated with a device for generating successive pressure fluctuations in the interior (9) of the pressure chamber (7).
    [19]
    19. The apparatus according to claim 18, characterized in that the device is a speaker.
    [20]
    20. The apparatus of claim 18 or 19, characterized in that the reference pressure sensor is a reference microphone.
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    同族专利:
    公开号 | 公开日
    AT511058B1|2012-09-15|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    JPH10142087A|1996-11-12|1998-05-29|Denso Corp|Method for adjusting output characteristic of semiconducfor pressure sensor|
    WO2002101348A1|2001-06-11|2002-12-19|Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.|Method and device for testing or calibrating a pressure sensor on a wafer|
    DE10357353A1|2003-12-09|2005-07-07|Robert Bosch Gmbh|Device for testing at least one pressure sensor|
    WO2006128475A1|2005-05-27|2006-12-07|Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.|Method and device for testing or calibrating a housed pressure sensor|
    JP2009145063A|2007-12-11|2009-07-02|Fuji Electric Device Technology Co Ltd|Method and apparatus for adjusting property of semiconductor pressure sensor|WO2015106302A1|2014-01-20|2015-07-23|Rainer Gaggl|Vertical probe card|
    WO2020148227A1|2019-01-14|2020-07-23|Rainer Gaggl|Probe card for tests under gas atmosphere|
    AT522017A1|2019-01-14|2020-07-15|Ing Dr Rainer Gaggl Dipl|Device for testing components|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    AT3722011A|AT511058B1|2011-03-17|2011-03-17|METHOD AND DEVICE FOR CHECKING PRESSURE SENSORS|AT3722011A| AT511058B1|2011-03-17|2011-03-17|METHOD AND DEVICE FOR CHECKING PRESSURE SENSORS|
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